Thermoelectric Seebeck effect in oxide-based resistive switching memory

Thermoelectric Seebeck effect in oxide-based resistive switching memory

Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is stil...

Conducting Nanofilaments in Metal Oxide Resistive Switching Memory

Development of a Thermoelectric Micro generation based on Seebeck Effect

This paper presents a study of the national electric power, showing the Brazil consumes electricity in a year and how much you could save if thermoelectric modules were used in some industries and new cars and planes to capture and transformation of residual thermal energy into electrical energy. The conclusion appears really attractive economically, given the fact that many processes generate ...

Resistive switching characteristics of gallium oxide for nonvolatile memory application

Available online 25 October 2012

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

Available online 17 September 2012